sot-23 plastic-encapsulate mosfets p-channel enhancement mode field effect transistor feature z high dense cell design for extremely low r ds(on) . z exceptional on-resistance and maximum dc current capability marking: r1 maximum ratings ( t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -30 v gate-source voltage v gs 12 v continuous drain current i d -4.2 a power dissipation p d 350 mw thermal resistance from junction to ambient ( t<5s )r ja 357 /w junction temperature t j 150 storage temperature t stg -55~+150 so t -23 1. gate 2. source 3. drain g d s 2012-10 willas electronic corp. se340 z
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max units off characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -30 v zero gate voltage drain current i dss v ds =-24v,v gs = 0v -1 a gate-source leakage current i gss v gs =12v, v ds = 0v 100 na on characteristics v gs =-10v, i d =-4.2a 65 m ? v gs =-4.5v, i d =-4a 75 m ? drain-source on-resistance (note 1) r ds(on) v gs =-2.5v,i d =-1a 90 m? forward tranconductance (note 1) g fs v ds =-5v, i d =-5a 7 s gate threshold voltage v gs(th) v ds =v gs , i d =-250a -0.7 -1.3 v dynamic characteristics (note 2) input capacitance c iss 954 pf output capacitance c oss 115 pf reverse transfer capacitance c rss v ds =-15v,v gs =0v,f =1mhz 77 pf switching characteristics (note 2) turn-on delay time t d(on) 6.3 ns turn-on rise time t r 3.2 ns turn-off delay time t d(off) 38.2 ns turn-off fall time t f v gs =-10v,v ds =-15v, r l =3.6 ?,r gen =6 ? 12 ns drain-source diode characteristics and maximum ratings diode forward voltage (note 1) v sd i s =-1a,v gs =0v -1 v note : 1. pulse test : pulse width 300s, duty cycle 2%. 2. these parameters have no way to verify. 2012-10 willas electronic corp. sot-23 plastic-encapsulate mosfets se340
-0.0 -0.3 -0.6 -0.9 -1.2 -1e-5 -1e-4 -1e-3 -0.01 -0.1 -1 -10 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -0 -1 -2 -3 -4 -5 -0 -1 -2 -3 -4 -5 -0 -5 -10 -15 -20 -25 -0 -2 -4 -6 -8 -10 20 40 60 80 100 120 -0 -2 -4 -6 -8 -10 20 40 60 80 100 source current i s (a) source to drain voltage v sd (v) transfer characteristics drain current i d (a) gate to source voltage v gs (v) v gs =-3.0v v gs =-10v v gs =-4.5v output characteristics v gs =-2.5v v gs =-2.0v drain current i d (a) drain to source voltage v ds (v) v sd i s t a =25 pulsed t a =25 pulsed t a =25 pulsed t a =25 pulsed t a =25 pulsed v gs =-2.5v v gs =-4.5v v gs =-10v i d r ds(on) on-resistance r ds(on) (m ) drain current i d (a) i d =-2a typical characteristics v gs r ds(on) on-resistance r ds(on) (m ) gate to source voltage v gs (v) 2012-10 willas electronic corp. sot-23 plastic-encapsulate mosfets se340
outline drawing dimensions in inches and (millimeters) sot-23 rev.d .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012-10 willas electronic corp. sot-23 plastic-encapsulate mosfets se340
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